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dc.creatorVujančević, Jelena
dc.creatorBjelajac, Anđelika
dc.creatorVeltruska, Katerina
dc.creatorMatolin, Vladimir
dc.creatorSiketić, Zdravko
dc.creatorProvatas, Georgios
dc.creatorJakšić, Milko
dc.creatorStan, George E.
dc.creatorSocol, Gabriel
dc.creatorMihailescu, Ion N.
dc.creatorPavlović, Vladimir B.
dc.creatorJanaćković, Đorđe
dc.date.accessioned2022-07-05T09:46:08Z
dc.date.available2022-07-05T09:46:08Z
dc.date.issued2022
dc.identifier.issn0350-820X
dc.identifier.urihttp://aspace.agrif.bg.ac.rs/handle/123456789/6115
dc.description.abstractPure Ti films deposited by radio-frequency magnetron sputtering on FTO glass were anodized to fabricate TiO2 nanotubes (NTs) arrays. The TiO2 NTs/FTO samples were sintered at 450, 550 and 630o C, in ambient air. The thermal treatment did not influence the crystal phase composition, preserving in all cases the anatase single phase. As expected, the crystalline anatase quality improved with the annealing temperature. Nevertheless, slight differences in nanotubular morphology, such as the appearance of grains inside the walls, were observed in the case of the sample sintered at 630o C. Chemical analysis by X-ray Photoelectron Spectroscopy of annealed samples revealed the presence of Sn inside TiO2 NTs, due to diffusion of Sn from the substrate to TiO2. For the substrate was used FTO glass whose top layer consists of SnO2 doped with F. Rutherford Backscattering Spectrometry and Time-of-Flight Elastic Recoil Detection Analysis were carried out to study the elemental depth profile of the films. It was found that the temperature of sintering controls the Sn diffusion inside TiO2 film. Sn atoms diffuse towards the TiO2 NTs surface for the samples annealed at 450 and 550oC. The diffusion is however hindered in the case of the heat treatment at 630o C. Besides, the Ti diffusion into the SnO2 underlayer was observed, together with the formation of TiO2/SnO2 interfaces. One then expected but not a great difference in absorption between samples, since all contained anatase phase, as confirmed by Diffuse Reflectance Spectroscopy. A higher amount of Sn was however detected for the sample annealed at 550o C, which accounts for a slight red absorption shift. The importance of controlling the annealing parameters of the anodized TiO2/FTO structures was highlighted through the formation of TiO2-SnO2 interfaces and the Sn insertion from FTO, which can play an essential role in increasing the photoperformances of TiO2 NTs/FTO based structures of photovoltaic cells. © 2022 Authors. Published by association for ETRAN Society.
dc.languageEnglish
dc.relationinfo:eu-repo/grantAgreement/MESTD/inst-2020/200175/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/inst-2020/200135/RS//
dc.rightsopenAccess
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceScience of Sintering
dc.sourceScience of Sintering
dc.subjectSintering
dc.subjectSn diffusion
dc.subjectSn-TiO2 doping
dc.subjectToF-ERDA
dc.subjectXPS
dc.titleTiO2 Nanotubes Film/FTO Glass Interface: Thermal Treatment Effects
dc.typearticleen
dc.rights.licenseBY
dc.citation.epage248
dc.citation.issue2
dc.citation.rankM22
dc.citation.spage235
dc.citation.volume54
dc.identifier.doi10.2298/SOS2202235V
dc.identifier.fulltexthttp://aspace.agrif.bg.ac.rs/bitstream/id/23846/TiO2_Nanotubes_FilmFTO_pub_2022.pdf
dc.type.versionpublishedVersion


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