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dc.creatorSlankamenac, M.
dc.creatorIvetić, T.
dc.creatorNikolić, M.V.
dc.creatorIvetić, N.
dc.creatorZivanov, M.
dc.creatorPavlović, Vladimir
dc.date.accessioned2020-12-17T19:55:43Z
dc.date.available2020-12-17T19:55:43Z
dc.date.issued2010
dc.identifier.issn0361-5235
dc.identifier.urihttp://aspace.agrif.bg.ac.rs/handle/123456789/2399
dc.description.abstractImpedance/admittance and dielectric spectroscopy were used to investigate the effect of temperature on the electrical response of liquid-phase sintered Zn2SnO4-SnO2 ceramics. The measurements were performed over a wide frequency range (100 Hz to 10 MHz) at different temperatures. The real and the imaginary part of the complex impedance traced semicircles in the complex plane. The resistance and the capacitance of bulk and grain-boundary regions were determined by modeling the experimental results using several equivalent circuits taking into account bulk deep trap states. Admittance complex diagrams were also determined in order to understand better the conduction mechanisms occurring in the polycrystalline Zn2SnO4-SnO2 system.en
dc.publisherSpringer, New York
dc.relationAmorphous and Nanostructural Chalcogenides [141026B]
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Electronic Materials
dc.subjectDielectric propertiesen
dc.subjectelectrical propertiesen
dc.subjectsolid-state ceramicsen
dc.titleImpedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage455
dc.citation.issue4
dc.citation.other39(4): 447-455
dc.citation.rankM22
dc.citation.spage447
dc.citation.volume39
dc.identifier.doi10.1007/s11664-010-1118-3
dc.identifier.rcubconv_4558
dc.identifier.scopus2-s2.0-77951023932
dc.identifier.wos000275900100013
dc.type.versionpublishedVersion


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