Raman spectroscopy study of graphene thin films synthesized from solid precursor
Samo za registrovane korisnike
2016
Autori
Prekodravac, JovanaMarković, Zoran
Jovanović, Svetlana P.
Holclajtner-Antunović, Ivanka
Pavlović, Vladimir
Todorović-Marković, Biljana
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures.
Ključne reči:
Graphene / Rapid thermal annealing / Raman spectroscopyIzvor:
Optical and Quantum Electronics, 2016, 48, 2Izdavač:
- Springer, Dordrecht
Finansiranje / projekti:
- Tanki slojevi jednoslojnih ugljeničnih nanotuba i grafena za primenu u elektronici (RS-172003)
- bilateral Project Serbia-Slovakia [SK-SRB-2013-0044, 451-03-545/2015-09/07]
DOI: 10.1007/s11082-016-0385-5
ISSN: 0306-8919
WoS: 000368741200039
Scopus: 2-s2.0-84955304797
Institucija/grupa
Poljoprivredni fakultetTY - JOUR AU - Prekodravac, Jovana AU - Marković, Zoran AU - Jovanović, Svetlana P. AU - Holclajtner-Antunović, Ivanka AU - Pavlović, Vladimir AU - Todorović-Marković, Biljana PY - 2016 UR - http://aspace.agrif.bg.ac.rs/handle/123456789/4142 AB - In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures. PB - Springer, Dordrecht T2 - Optical and Quantum Electronics T1 - Raman spectroscopy study of graphene thin films synthesized from solid precursor IS - 2 VL - 48 DO - 10.1007/s11082-016-0385-5 ER -
@article{ author = "Prekodravac, Jovana and Marković, Zoran and Jovanović, Svetlana P. and Holclajtner-Antunović, Ivanka and Pavlović, Vladimir and Todorović-Marković, Biljana", year = "2016", abstract = "In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures.", publisher = "Springer, Dordrecht", journal = "Optical and Quantum Electronics", title = "Raman spectroscopy study of graphene thin films synthesized from solid precursor", number = "2", volume = "48", doi = "10.1007/s11082-016-0385-5" }
Prekodravac, J., Marković, Z., Jovanović, S. P., Holclajtner-Antunović, I., Pavlović, V.,& Todorović-Marković, B.. (2016). Raman spectroscopy study of graphene thin films synthesized from solid precursor. in Optical and Quantum Electronics Springer, Dordrecht., 48(2). https://doi.org/10.1007/s11082-016-0385-5
Prekodravac J, Marković Z, Jovanović SP, Holclajtner-Antunović I, Pavlović V, Todorović-Marković B. Raman spectroscopy study of graphene thin films synthesized from solid precursor. in Optical and Quantum Electronics. 2016;48(2). doi:10.1007/s11082-016-0385-5 .
Prekodravac, Jovana, Marković, Zoran, Jovanović, Svetlana P., Holclajtner-Antunović, Ivanka, Pavlović, Vladimir, Todorović-Marković, Biljana, "Raman spectroscopy study of graphene thin films synthesized from solid precursor" in Optical and Quantum Electronics, 48, no. 2 (2016), https://doi.org/10.1007/s11082-016-0385-5 . .