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Raman spectroscopy study of graphene thin films synthesized from solid precursor

Authorized Users Only
2016
Authors
Prekodravac, Jovana
Marković, Zoran
Jovanović, Svetlana P.
Holclajtner-Antunović, Ivanka
Pavlović, Vladimir
Todorović-Marković, Biljana
Article (Published version)
Metadata
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Abstract
In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures.
Keywords:
Graphene / Rapid thermal annealing / Raman spectroscopy
Source:
Optical and Quantum Electronics, 2016, 48, 2
Publisher:
  • Springer, Dordrecht
Funding / projects:
  • Thin films of single wall carbon nanotubes and graphene for electronic application (RS-172003)
  • bilateral Project Serbia-Slovakia [SK-SRB-2013-0044, 451-03-545/2015-09/07]

DOI: 10.1007/s11082-016-0385-5

ISSN: 0306-8919

WoS: 000368741200039

Scopus: 2-s2.0-84955304797
[ Google Scholar ]
7
4
URI
http://aspace.agrif.bg.ac.rs/handle/123456789/4142
Collections
  • Radovi istraživača / Researchers’ publications
Institution/Community
Poljoprivredni fakultet
TY  - JOUR
AU  - Prekodravac, Jovana
AU  - Marković, Zoran
AU  - Jovanović, Svetlana P.
AU  - Holclajtner-Antunović, Ivanka
AU  - Pavlović, Vladimir
AU  - Todorović-Marković, Biljana
PY  - 2016
UR  - http://aspace.agrif.bg.ac.rs/handle/123456789/4142
AB  - In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures.
PB  - Springer, Dordrecht
T2  - Optical and Quantum Electronics
T1  - Raman spectroscopy study of graphene thin films synthesized from solid precursor
IS  - 2
VL  - 48
DO  - 10.1007/s11082-016-0385-5
UR  - conv_5667
ER  - 
@article{
author = "Prekodravac, Jovana and Marković, Zoran and Jovanović, Svetlana P. and Holclajtner-Antunović, Ivanka and Pavlović, Vladimir and Todorović-Marković, Biljana",
year = "2016",
abstract = "In this work, we present Raman spectroscopy study of graphene thin films obtained by rapid thermal annealing in vacuum. As a carbon source, we used spectroscopic graphite electrodes cut into small pieces on top of which we deposited copper/nickel thin films. Samples were then annealed at different annealing temperatures (600, 700, 800 and 900 degrees C) for 30 min. Raman spectroscopy study showed that annealing at lower annealing temperatures (600 and 700 degrees C) leads to formation of single layer graphene thin films with relatively high level of defects. Annealing at higher annealing temperatures (800 and 900 degrees C), on the other hand, resulted in formation of homogenous multilayer graphene thin films. From Raman spectra, we also concluded that samples annealed at higher annealing temperatures had lower level of defects compared to the samples annealed at lower annealing temperatures.",
publisher = "Springer, Dordrecht",
journal = "Optical and Quantum Electronics",
title = "Raman spectroscopy study of graphene thin films synthesized from solid precursor",
number = "2",
volume = "48",
doi = "10.1007/s11082-016-0385-5",
url = "conv_5667"
}
Prekodravac, J., Marković, Z., Jovanović, S. P., Holclajtner-Antunović, I., Pavlović, V.,& Todorović-Marković, B.. (2016). Raman spectroscopy study of graphene thin films synthesized from solid precursor. in Optical and Quantum Electronics
Springer, Dordrecht., 48(2).
https://doi.org/10.1007/s11082-016-0385-5
conv_5667
Prekodravac J, Marković Z, Jovanović SP, Holclajtner-Antunović I, Pavlović V, Todorović-Marković B. Raman spectroscopy study of graphene thin films synthesized from solid precursor. in Optical and Quantum Electronics. 2016;48(2).
doi:10.1007/s11082-016-0385-5
conv_5667 .
Prekodravac, Jovana, Marković, Zoran, Jovanović, Svetlana P., Holclajtner-Antunović, Ivanka, Pavlović, Vladimir, Todorović-Marković, Biljana, "Raman spectroscopy study of graphene thin films synthesized from solid precursor" in Optical and Quantum Electronics, 48, no. 2 (2016),
https://doi.org/10.1007/s11082-016-0385-5 .,
conv_5667 .

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